View IXGK120N120B3_78525.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Advance Technical Information
GenX3TM 1200V IGBTs
IXGK120N120B3 IXGX120N120B3
VCES = 1200V IC90 = 120A VCE(sat) 3.0V
High Speed Low Vsat PT IGBTs for 3-20 kHz Switching
TO-264 (IXGK)
Symbol VCES VCGR VGES VGEM IC25 IC90 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C ( Chip Capability ) TC = 90C Terminal Current Limit TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 2 Clamped Inductive Load TC = 25C
Maximum Ratings 1200 1200 20 30 200 120 120 370 ICM = 240 VCES < 1200 830 -55 ... +150 150 -55 ... +150 V V V V A A A A A V W C C C C C Nm/lb.in. N/lb. g g Features Optimized for Low Conduction and Switching Losses Square RBSOA International Standard Packages Advantages High Power Density Low Gate Drive Requirement Applications V 5.0 V 50 A 5 mA 400 nA 2.4 3.0 V Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts G = Gate C = Collector E = Emitter TAB = Collector
G C (TAB) G C E E (TAB)
PLUS 247TM (IXGX)
E
Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Mounting Torque ( IXGK ) Mounting Force ( IXGX ) TO-264 PLUS247
300 260 1.13/10 20..120/4.5..27 10 6
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250A, VCE = 0V = 1mA, VCE = VGE TJ = 125C
Characteristic Values Min. Typ. Max. 1200 3.0
VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V IC = 100A, VGE = 15V, Note 1
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS100152(05/09)
IXGK120N120B3 IXGX120N120B3
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK 0.15 Inductive load, TJ = 125C IC = 100A, VGE = 15V VCE = 600V, RG = 2 Note 2 Inductive load, TJ = 25C IC = 100A, VGE = 15V VCE = 600V, RG = 2 Note 2 IC = IC90, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1 MHz IC = 60A, VCE = 10V, Note 1 Characteristic Values Min. Typ. Max. 40 70 9700 670 255 470 67 190 36 88 5.5 275 145 5.8 34 88 6.1 315 570 10.3 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.15 C/W C/W PLUS 247TM (IXGX) Outline TO-264 (IXGK) Outline
Note
1. Pulse Test, t 300s, Duty Cycle, d 2%. 2. Switching Times may Increase for VCE (Clamp) > 0.8 VCES, Higher TJ or Increased RG.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter)
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
7,157,338B2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537

▲Up To Search▲

Price & Availability of IXGK120N120B3

	To Download IXGK120N120B3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .